STB45NF06T4 STMicroelectronics, STB45NF06T4 Datasheet - Page 5

• Manufacturer Part Number: STB45NF06T4
• Description: MOSFET N-CH 60V 38A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB45NF06T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Input Capacitance (ciss) @ Vds: 980pF @ 25V
• Power - Max: 80W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 38 A
• Power Dissipation: 80000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 19A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 235mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10314-2; STB45NF06T4

STB45NF06, STP45NF06
Table 8.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Pulse width limited by safe operating area.
Symbol
I
V
SDM
I
RRM
I
SD
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 7433 Rev 5
I
I
di/dt = 100A/µs,
V
(see Figure 15)
SD
SD
DD
= 38 A, V
= 34 A,
Test conditions
= 10 V, Tj = 150°C
GS
=0
Electrical characteristics
Min.
Typ.
150
65
5
Max.
152
1.5
38
Unit
nC
ns
A
A
V
A
5/15