STB4NK60Z-1 STMicroelectronics, STB4NK60Z-1 Datasheet - Page 15

• Manufacturer Part Number: STB4NK60Z-1
• Description: MOSFET N-CH 600V 4A I2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB4NK60Z-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STB4NK60Zx, STD4NK60Zx, STP4NK60Z, STP4NK60ZFP
DIM.
(L1)
A1
V1
b2
b4
c2
e1
L2
D
H
A
b
E
e
L
c
min.
2.20
0.90
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.00
0.80
TO-251 (IPAK) mechanical data
16.10
mm.
2.28
0.80
10
typ
o
Package mechanical data
0068771_H
max.
2.40
1.10
0.90
0.95
5.40
0.60
0.60
6.20
6.60
4.60
9.40
1.20
15/20