IRF540ZSTRRPBF International Rectifier, IRF540ZSTRRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF540ZSTRRPBF
• Description: MOSFET N-CH 100V 36A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF540ZSTRRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 26.5 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1770pF @ 25V
• Power - Max: 92W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 36A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 26.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 26.5 m Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 36 A
• Power Dissipation: 92 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 39 ns
• Gate Charge Qg: 42 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 51 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000
1000
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
100
100
10
10
1
1
4.0
0.1
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
T J = 175°C
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
T J = 25°C
4.5V
5.0
1
60µs PULSE WIDTH
Tj = 25°C
V DS = 25V
60µs PULSE WIDTH
6.0
10
100
7.0
Fig 4. Typical Forward Transconductance
1000
Fig 2. Typical Output Characteristics
100
10
80
60
40
20
1
0
0.1
0
0
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
I D, Drain-to-Source Current (A)
10
Vs. Drain Current
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
1
20
V DS = 10V
380µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 175°C
4.5V
30
T J = 175°C
10
10
T J = 25°C
40
3
100
100
50