IRF540,127 NXP Semiconductors, IRF540,127 Datasheet

MOSFET N-CH 100V 23A TO-220AB

IRF540,127

Manufacturer Part Number
IRF540,127
Description
MOSFET N-CH 100V 23A TO-220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.IRF540127.pdf (9 pages)

Specifications of IRF540,127

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
77 mOhm @ 17A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
1187pF @ 25V
Power - Max
100W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-1160-5
934055542127
Philips Semiconductors
FEATURES
• ’Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
• T.V. and computer monitor power supplies
The IRF540 is supplied in the SOT78 (TO220AB) conventional leaded package.
The IRF540S is supplied in the SOT404 (D
PINNING
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
1 It is not possible to make connection to pin:2 of the SOT404 package
August 1999
N-channel TrenchMOS
SYMBOL PARAMETER
V
V
V
I
I
P
T
D
DM
j
DSS
DGR
GS
D
, T
PIN
tab
1
2
3
stg
gate
drain
source
drain
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
1
DESCRIPTION
transistor
SYMBOL
SOT78 (TO220AB)
CONDITIONS
T
T
T
T
T
T
2
PAK) surface mounting package.
j
j
mb
mb
mb
mb
= 25 ˚C to 175˚C
= 25 ˚C to 175˚C; R
= 25 ˚C; V
= 100 ˚C; V
= 25 ˚C
= 25 ˚C
g
tab
1
GS
GS
1 2 3
d
s
= 10 V
= 10 V
GS
= 20 k
QUICK REFERENCE DATA
SOT404 (D
R
MIN.
- 55
V
DS(ON)
IRF540, IRF540S
-
-
-
-
-
-
-
DSS
I
D
Product specification
2
= 23 A
1
PAK)
= 100 V
tab
2
MAX.
77 m
100
100
100
175
23
16
92
3
20
Rev 1.100
UNIT
W
˚C
V
V
V
A
A
A

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IRF540,127 Summary of contents

Page 1

Philips Semiconductors N-channel TrenchMOS FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:- • d.c. to d.c. converters ...

Page 2

Philips Semiconductors N-channel TrenchMOS AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER E Non-repetitive avalanche AS energy I Peak non-repetitive AS avalanche current THERMAL RESISTANCES SYMBOL PARAMETER R Thermal resistance junction ...

Page 3

Philips Semiconductors N-channel TrenchMOS REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T = 25˚C unless otherwise specified j SYMBOL PARAMETER I Continuous source current S (body diode) I Pulsed source current (body SM diode) V Diode forward voltage SD t Reverse ...

Page 4

Philips Semiconductors N-channel TrenchMOS Normalised Power Derating, PD (%) 100 100 Mounting Base temperature, Tmb (C) Fig.1. Normalised power dissipation. PD% = 100 ...

Page 5

Philips Semiconductors N-channel TrenchMOS Drain current VDS > RDS(ON 175 ...

Page 6

Philips Semiconductors N-channel TrenchMOS Source-Drain Diode Current, IF (A) 30 VGS = 175 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 ...

Page 7

Philips Semiconductors N-channel TrenchMOS MECHANICAL DATA Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220 DIMENSIONS (mm are the original dimensions UNIT A 1 4.5 1.39 0.9 mm 4.1 1.27 0.7 Note 1. Terminals in this zone ...

Page 8

Philips Semiconductors N-channel TrenchMOS MECHANICAL DATA Plastic single-ended surface mounted package (Philips version of D (one lead cropped DIMENSIONS (mm are the original dimensions) UNIT 4.50 1.40 mm 4.10 1.27 OUTLINE VERSION ...

Page 9

Philips Semiconductors N-channel TrenchMOS MOUNTING INSTRUCTIONS Dimensions in mm DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. ...

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