IRF540,127 NXP Semiconductors, IRF540,127 Datasheet - Page 6

• Manufacturer Part Number: IRF540,127
• Description: MOSFET N-CH 100V 23A TO-220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of IRF540,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 77 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 1187pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-1160-5; 934055542127

Philips Semiconductors
August 1999
N-channel TrenchMOS
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
I
F
0
Source-Drain Diode Current, IF (A)
= f(V
VGS = 0 V
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Fig.13. Typical reverse diode current.
SDS
); conditions: V
Source-Drain Voltage, VSDS (V)
175 C
GS
= 0 V; parameter T
Tj = 25 C
transistor
1.1 1.2 1.3 1.4 1.5
j
6
avalanche current (I
100
0.1
10
1
0.001
Fig.14. Maximum permissible non-repetitive
Maximum Avalanche Current, I
Tj prior to avalanche = 150 C
unclamped inductive load
0.01
Avalanche time, t
AS
) versus avalanche time (t
0.1
AS
(A)
IRF540, IRF540S
AV
(ms)
Product specification
25 C
1
Rev 1.100
10
AV
);