BUK714R1-40BT NXP Semiconductors, BUK714R1-40BT Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology

BUK714R1-40BT

Manufacturer Part Number
BUK714R1-40BT
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. The
devices include TrenchPLUS diodes for temperature sensing. This product has been
designed and qualified to the appropriate AEC standard for use in automotive critical
applications.
Table 1.
[1]
Symbol Parameter
V
I
P
Static characteristics
R
D
DS
tot
DSon
Allows responsive temperature
monitoring due to integrated
temperature sensor
Low conduction losses due to low
on-state resistance
12 V loads
Electrical Power Assisted Steering
(EPAS)
Continuous current is limited by package.
BUK714R1-40BT
N-channel TrenchPLUS standard level FET
Rev. 02 — 10 February 2009
drain-source voltage T
drain current
total power
dissipation
drain-source
on-state resistance
Quick reference
Conditions
V
see
V
see
T
V
T
see
j
mb
j
GS
GS
GS
≥ 25 °C; T
= 25 °C; see
Figure
Figure 2
Figure 8
= 25 °C; see
= 10 V; T
= 10 V; T
= 10 V; I
2; see
j
D
≤ 175 °C
mb
mb
= 50 A;
Figure
= 25 °C;
= 100 °C;
Figure 1
Figure 3
7;
Q101 compliant
Suitable for thermally demanding
environments due to 175 °C rating
General purpose power switching
Motors, lamps and solenoids
[1]
[1]
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
3.4
Max
40
75
75
272
4.1
Unit
V
A
A
W
mΩ

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BUK714R1-40BT Summary of contents

Page 1

... BUK714R1-40BT N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. The devices include TrenchPLUS diodes for temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications ...

Page 2

... Ordering information Type number Package Name Description BUK714R1-40BT D2PAK plastic single-ended surface-mounted package (D2PAK); 5 leads (one lead cropped) BUK714R1-40BT_2 Product data sheet BUK714R1-40BT N-channel TrenchPLUS standard level FET Simplified outline SOT426 (D2PAK) Rev. 02 — 10 February 2009 Graphic symbol ...

Page 3

... Figure °C; mb ≤ 10 µs; pulsed ° ≤ Ω sup °C; unclamped j(init) HBM 100 pF 1.5 kΩ Rev. 02 — 10 February 2009 BUK714R1-40BT Min Max - - [1] - 187 [ [ Figure 3 - 748 ...

Page 4

... T (°C) mb Fig 2. Continuous drain current as a function of mounting base temperature Capped due to package D.C. 1 Rev. 02 — 10 February 2009 BUK714R1-40BT N-channel TrenchPLUS standard level FET 03nm69 Capped due to package 0 50 100 150 T mb (°C) 03nm68 µs 100 µs ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK714R1-40BT_2 Product data sheet N-channel TrenchPLUS standard level FET Conditions minimum footprint; mounted on a printed-circuit board see Figure Rev. 02 — 10 February 2009 BUK714R1-40BT Min Typ Max Unit - - 50 K 0.55 K/W ...

Page 6

... °C j from upper edge of drain mounting base to centre of die °C j from source lead to source bond pad; lead length 6 mm °C j Rev. 02 — 10 February 2009 BUK714R1-40BT Min Typ Max Unit ...

Page 7

... V DS (V) Fig 6. 03nq16 2 Lable ( -60 200 300 I D (A) Fig 8. Rev. 02 — 10 February 2009 BUK714R1-40BT N-channel TrenchPLUS standard level FET Min Typ Max - 0.85 1 03nq17 (V) Drain-source on-state resistance as a function of gate-source voltage; typical values ...

Page 8

... C (pF) 6000 4000 2000 75 100 ( Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 02 — 10 February 2009 BUK714R1-40BT 03aa35 min typ max (V) GS 03nh35 C iss C oss C rss ...

Page 9

... T j (°C) Fig 16. Reverse diode current as a function of reverse diode voltage; typical values Rev. 02 — 10 February 2009 BUK714R1-40BT N-channel TrenchPLUS standard level FET 03nq21 (nC) 03nq20 175 ° °C ...

Page 10

... max. 1.60 10.30 2.90 15.80 11 1.70 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA Rev. 02 — 10 February 2009 BUK714R1-40BT N-channel TrenchPLUS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-03-09 06-03-16 © NXP B.V. 2009. All rights reserved. SOT426 ...

Page 11

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK714R1-40BT separated from data sheet BUK71_794R1_40BT-01. BUK71_794R1_40BT-01 20041104 (9397 750 13954) BUK714R1-40BT_2 ...

Page 12

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 10 February 2009 BUK714R1-40BT © NXP B.V. 2009. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: Rev. 02 — 10 February 2009 Document identifier: BUK714R1-40BT_2 All rights reserved. ...

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