IRF540,127 NXP Semiconductors, IRF540,127 Datasheet - Page 4

• Manufacturer Part Number: IRF540,127
• Description: MOSFET N-CH 100V 23A TO-220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of IRF540,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 77 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 1187pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-1160-5; 934055542127

Philips Semiconductors
August 1999
N-channel TrenchMOS
1000
ID% = 100 I
100
100
100
90
80
70
60
50
40
30
20
10
0.1
90
80
70
60
50
40
30
20
10
10
0
0
1
I
Fig.2. Normalised continuous drain current.
D
0
0
1
Normalised Current Derating, ID (%)
& I
Normalised Power Derating, PD (%)
Peak Pulsed Drain Current, IDM (A)
Fig.3. Safe operating area. T
RDS(on) = VDS/ ID
Fig.1. Normalised power dissipation.
DM
25
25
= f(V
PD% = 100 P
D
Mounting Base temperature, Tmb (C)
/I
Mounting Base temperature, Tmb (C)
D 25 ˚C
Drain-Source Voltage, VDS (V)
DS
50
50
); I
10
= f(T
D.C.
DM
single pulse; parameter t
75
75
mb
D
/P
); conditions: V
D 25 ˚C
100
100
100
= f(T
100 us
1 ms
transistor
10 ms
100 ms
tp = 10 us
125
125
mb
mb
= 25 ˚C
)
GS
150
150
10 V
1000
p
175
175
4
0.01
55
50
45
40
35
30
25
20
15
10
0.1
Fig.5. Typical output characteristics, T
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
5
0
Fig.6. Typical on-state resistance, T
0
1
1E-06
0
0
Transient thermal impedance, Zth j-mb (K/W)
Drain Current, ID (A)
0.02
Drain-Source On Resistance, RDS(on) (Ohms)
0.1
0.05
0.2
D = 0.5
4V
single pulse
Fig.4. Transient thermal impedance.
5 V
1
1E-05
Z
th j-mb
2
10
5.5V
Drain-Source Voltage, VDS (V)
= f(t); parameter D = t
1E-04
3
R
Pulse width, tp (s)
Drain Current, ID (A)
9 V
I
DS(ON)
D
4
20
6V
= f(V
1E-03
5
= f(I
DS
IRF540, IRF540S
6.5V
)
8 V
D
6
30
)
1E-02
Product specification
P
D
7
tp
p
T
7 V
/T
1E-01
8
40
j
j
D = tp/T
= 25 ˚C .
VGS =9 V
= 25 ˚C .
Rev 1.100
9
8V
7 V
5 V
6 V
4V
1E+00
10
50