IRF540,127 NXP Semiconductors, IRF540,127 Datasheet - Page 3

• Manufacturer Part Number: IRF540,127
• Description: MOSFET N-CH 100V 23A TO-220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of IRF540,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 77 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 1187pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-1160-5; 934055542127

Philips Semiconductors
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
August 1999
N-channel TrenchMOS
SYMBOL PARAMETER
I
I
V
t
Q
j
S
SM
rr
= 25˚C unless otherwise specified
SD
rr
Continuous source current
(body diode)
Pulsed source current (body
diode)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
transistor
CONDITIONS
I
I
V
F
F
GS
= 28 A; V
= 17 A; -dI
= 0 V; V
GS
R
F
/dt = 100 A/ s;
= 25 V
= 0 V
3
MIN.
-
-
-
-
-
IRF540, IRF540S
TYP. MAX. UNIT
0.94
Product specification
200
61
-
-
1.5
23
92
-
-
Rev 1.100
nC
ns
A
A
V