IRF3709SPBF International Rectifier, IRF3709SPBF Datasheet - Page 3

• Manufacturer Part Number: IRF3709SPBF
• Description: MOSFET N-CH 30V 90A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3709SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 5V
• Input Capacitance (ciss) @ Vds: 2672pF @ 16V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 90 A
• Power Dissipation: 120 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 9.2 ns
• Gate Charge Qg: 27 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 171 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3709SPBF

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1000
1000
Fig 3. Typical Transfer Characteristics
100
100
10
Fig 1. Typical Output Characteristics
10
1
0.1
2.0
TOP
BOTTOM
V
V
DS
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
2.7V
3.0
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T = 25 C
1
J
2.7V
4.0
°
20µs PULSE WIDTH
T = 25 C
J
V
20µs PULSE WIDTH
5.0
T = 150 C
DS
J
10
= 15V
°
°
6.0
100
7.0
1000
100
Fig 2. Typical Output Characteristics
10
2.0
1.5
1.0
0.5
0.0
1
Fig 4. Normalized On-Resistance
0.1
-60 -40 -20
TOP
BOTTOM
I =
D
V
90A
DS
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
2.7V
T , Junction Temperature ( C)
Vs. Temperature
J
, Drain-to-Source Voltage (V)
0
1
20 40 60 80 100 120 140 160
2.7V
20µs PULSE WIDTH
T = 150 C
J
10
°
V
GS
°
=
10V
3
100