IRF3709SPBF International Rectifier, IRF3709SPBF Datasheet - Page 4

• Manufacturer Part Number: IRF3709SPBF
• Description: MOSFET N-CH 30V 90A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3709SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 5V
• Input Capacitance (ciss) @ Vds: 2672pF @ 16V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 90 A
• Power Dissipation: 120 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 9.2 ns
• Gate Charge Qg: 27 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 171 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3709SPBF

4
1000
100
0.1
10
4000
3000
2000
1000
1
0.2
Fig 5. Typical Capacitance Vs.
0
Fig 7. Typical Source-Drain Diode
T = 150 C
J
1
Drain-to-Source Voltage
V
SD
V
°
DS
0.8
,Source-to-Drain Voltage (V)
Forward Voltage
T = 25 C
V
C
C
C
, Drain-to-Source Voltage (V)
J
GS
iss
rss
oss
=
=
=
=
0V,
C
C
C
°
gs
gd
ds
1.4
+ C
+ C
10
C oss
C rss
f = 1MHz
gd ,
gd
C iss
C
ds
2.0
V
GS
SHORTED
= 0 V
2.6
100
10000
1000
Fig 8. Maximum Safe Operating Area
100
6
5
4
3
2
1
0
10
1
0
Fig 6. Typical Gate Charge Vs.
I =
1
D
T
T
Single Pulse
C
J
30A
= 25 C °
= 150 C
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
5
V
Q , Total Gate Charge (nC)
DS
G
°
, Drain-to-Source Voltage (V)
10
BY R
15
10
DS(on)
V
V
V
DS
DS
DS
www.irf.com
= 24V
= 15V
= 6V
20
10us
100us
1ms
10ms
25
30
100