IRF3709SPBF International Rectifier, IRF3709SPBF Datasheet - Page 5

• Manufacturer Part Number: IRF3709SPBF
• Description: MOSFET N-CH 30V 90A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3709SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 5V
• Input Capacitance (ciss) @ Vds: 2672pF @ 16V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 90 A
• Power Dissipation: 120 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 9.2 ns
• Gate Charge Qg: 27 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 171 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3709SPBF

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0.01
0.1
100
0.00001
10
80
60
40
20
1
0
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
Case Temperature
50
T , Case Temperature ( C)
C
LIMITED BY PACKAGE
(THERMAL RESPONSE)
75
0.0001
SINGLE PULSE
100
125
°
t , Rectangular Pulse Duration (sec)
1
0.001
150
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
0.01
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
t
r
≤ 0.1 %
J
≤ 1
DM
x Z
1
0.1
thJC
P
2
t
DM
d(off)
+ T
C
t
1
t
f
t
2
+
-
5
1