IRLR3636PBF International Rectifier, IRLR3636PBF Datasheet - Page 6

• Manufacturer Part Number: IRLR3636PBF
• Description: MOSFET N-CH 60V 50A D-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR3636PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.8 mohm @ 50A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.5V @ 100µA
• Gate Charge (qg) @ Vgs: 49nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3779pF @ 50V
• Power - Max: 143W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.3 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 99 A
• Power Dissipation: 143 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 33 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRLR/U3636PbF
6
3.0
2.5
2.0
1.5
1.0
0.5
0.0
16
14
12
10
Fig 16. Threshold Voltage vs. Temperature
8
6
4
2
0
-75 -50 -25
0
I F = 30A
V R = 51V
T J = 25°C
T J = 125°C
I D = 100µA
ID = 250µA
I D = 1.0mA
ID = 1.0A
200
T J , Temperature ( °C )
0
400
di F /dt (A/µs)
25 50 75 100 125 150 175
600
350
300
250
200
150
100
50
0
800
0
I F = 30A
V R = 51V
T J = 25°C
T J = 125°C
1000
f
200
400
di F /dt (A/µs)
600
800
350
300
250
200
150
100
14
12
10
50
8
6
4
2
0
0
f
1000
0
0
I F = 20A
V R = 51V
T J = 25°C
T J = 125°C
I F = 20A
V R = 51V
T J = 25°C
T J = 125°C
200
200
400
di F /dt (A/µs)
400
di F /dt (A/µs)
600
600
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800
800
f
1000
1000
f