IRLR3636PBF International Rectifier, IRLR3636PBF Datasheet - Page 8

• Manufacturer Part Number: IRLR3636PBF
• Description: MOSFET N-CH 60V 50A D-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR3636PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.8 mohm @ 50A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.5V @ 100µA
• Gate Charge (qg) @ Vgs: 49nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3779pF @ 50V
• Power - Max: 143W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.3 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 99 A
• Power Dissipation: 143 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 33 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRLR/U3636PbF
,5)5
$


5
,5)5


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
www.irf.com