IRLR3636PBF International Rectifier, IRLR3636PBF Datasheet - Page 7

• Manufacturer Part Number: IRLR3636PBF
• Description: MOSFET N-CH 60V 50A D-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR3636PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.8 mohm @ 50A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.5V @ 100µA
• Gate Charge (qg) @ Vgs: 49nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3779pF @ 50V
• Power - Max: 143W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.3 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 99 A
• Power Dissipation: 143 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 33 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 22a. Unclamped Inductive Test Circuit
Fig 23a. Switching Time Test Circuit
Fig 24a. Gate Charge Test Circuit

‚
+
-
12V
V
GS
R G
20V
V
Same Type as D.U.T.
V DS
GS
D.U.T
Current Regulator
.2µF
≤ 0.1 %
≤ 1
t p
50KΩ
3mA
Fig 21.
Current Sampling Resistors
I AS
ƒ
D.U.T
.3µF
+
-
•
•
•
•
0.01 Ω
L
I
G
SD
•
•
•
D.U.T.
I
D
15V
-
+
-
V
„
G
HEXFET
DRIVER
DS
+
-
+
V DD
+
-
A
®
Power MOSFETs
+
-
Re-Applied
Voltage
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
90%
10%
V
Fig 22b. Unclamped Inductive Waveforms
DS
GS
Fig 23b. Switching Time Waveforms
P.W.
SD
DS
I
Fig 24b. Gate Charge Waveform
AS
Vgs(th)
Waveform
Qgs1 Qgs2
Waveform
Vds
for N-Channel
Ripple ≤ 5%
Body Diode
t
Period
d(on)
Body Diode Forward
Diode Recovery
Current
Qgd
t
dv/dt
Forward Drop
r
t p
di/dt
Qgodr
D =
Period
P.W.
IRLR/U3636PbF
V
(BR)DSS
t
V
V
I
d(off)
SD
GS
DD
Vgs
=10V
Id
t
f
7