STP4NK80ZFP STMicroelectronics, STP4NK80ZFP Datasheet - Page 6

• Manufacturer Part Number: STP4NK80ZFP
• Description: MOSFET N-CH 800V 3A TO-220FP
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP4NK80ZFP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 22.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 575pF @ 25V
• Power - Max: 25W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.5 Ohms
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3 A
• Power Dissipation: 25 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
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Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
RRM
I
SD
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
I
I
di/dt = 100A/µs,
V
(see
SD
SD
DD
= 3 A, V
= 3 A,
Test conditions
=80 V, Tj=150°C
Figure
GS
20)
=0
Min
1520
Typ.
400
7.6
Max
1.6
12
3
Unit
µC
ns
A
A
V
A