IRFH5010TRPBF International Rectifier, IRFH5010TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRFH5010TRPBF
• Description: MOSFET N-CH 100V 100A 8-PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5010TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 98nC @ 10V
• Input Capacitance (ciss) @ Vds: 4340pF @ 25V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVQFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
100000
10000
Fig 3. Typical Transfer Characteristics
1000
1000
1000
0.01
Fig 1. Typical Output Characteristics
100
100
100
0.1
0.1
10
10
10
1
1
0.1
2.5
1
T J = 150°C
3
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
3.5
1
4
3.75V
≤ 60µs
Tj = 25°C
T J = 25°C
4.5
C rss
C iss
C oss
f = 1 MHZ
10
V DS = 50V
≤60µs PULSE WIDTH
PULSE WIDTH
5
10
5.5
TOP
BOTTOM
6
6.5
VGS
15V
10V
7.00V
5.00V
4.50V
4.25V
4.00V
3.75V
100
100
7
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
1000
Fig 4. Normalized On-Resistance Vs. Temperature
100
2.5
2.0
1.5
1.0
0.5
14
12
10
10
8
6
4
2
0
1
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
0
Fig 2. Typical Output Characteristics
I D = 37A
TOP
BOTTOM
I D = 50A
V GS = 10V
10
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Q G , Total Gate Charge (nC)
20
VGS
15V
10V
7.00V
5.00V
4.50V
4.25V
4.00V
3.75V
V DS = 80V
V DS = 50V
VDS= 20V
30
1
3.75V
≤ 60µs
Tj = 150°C
40
PULSE WIDTH
50
60
10
70
80
100
90
3