IRFH5010TRPBF International Rectifier, IRFH5010TRPBF Datasheet - Page 8

• Manufacturer Part Number: IRFH5010TRPBF
• Description: MOSFET N-CH 100V 100A 8-PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5010TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 98nC @ 10V
• Input Capacitance (ciss) @ Vds: 4340pF @ 25V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVQFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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…
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PQFN 5x6 Outline "B" Tape and Reel
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Qualification level
Moisture Sensitivity Level
RoHS compliant
Qualification information
Repetitive rating; pulse width limited by max. junction temperature.
R
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production
test capability
8
Starting T
θ
is measured at
Qualification standards can be found at International Rectifier’s web site
Higher qualification ratings may be available should the user have such requirements.
Applicable version of JEDEC standard at the time of product release.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
http://www.irf.com/product-info/reliability
J
= 25°C, L = 0.181mH, R
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
T
J
of approximately 90°C.
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G
= 50Ω, I
AS
= 50A.
PQFN 5mm x 6mm
Visit us at www.irf.com for sales contact information.03/2010
(per JE DE C JE S D47F
Data and specifications subject to change without notice.
Indus trial
Yes
(per JE DE C J-S T D-020D
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guidelines )
TAC Fax: [phone]
MS L1
www.irf.com
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)