IRFH5010TRPBF International Rectifier, IRFH5010TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRFH5010TRPBF
• Description: MOSFET N-CH 100V 100A 8-PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5010TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 98nC @ 10V
• Input Capacitance (ciss) @ Vds: 4340pF @ 25V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVQFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 7. Typical Source-Drain Diode Forward Voltage
4
1000
100
120
100
0.1
10
80
60
40
20
Fig 9. Maximum Drain Current Vs.
0.001
1
0
0.01
0.2
0.1
25
Case (Bottom) Temperature
1E-006
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
0.4
V SD , Source-to-Drain Voltage (V)
T J = 150°C
50
T C , Case Temperature (°C)
0.6
Limited By Package
75
D = 0.50
0.8
T J = 25°C
0.02
0.05
0.01
0.20
0.10
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
1
100
1.2
V GS = 0V
125
1.4
t 1 , Rectangular Pulse Duration (sec)
150
1.6
0.0001
0.001
10000
1000
Fig 10. Threshold Voltage Vs. Temperature
100
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.1
10
1
0.10
-75 -50 -25
Fig 8. Maximum Safe Operating Area
Tc = 25°C
Tj = 150°C
Single Pulse
I D = 1.0A
ID = 1.0mA
ID = 500µA
ID = 150µA
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
V DS , Drain-to-Source Voltage (V)
1
T J , Temperature ( °C )
0.01
0
OPERATION IN THIS AREA LIMITED
BY R DS (on)
10msec
25
10
1msec
100µsec
50
75 100 125 150
www.irf.com
100
0.1
1000