STD65N55F3 STMicroelectronics, STD65N55F3 Datasheet

MOSFET N-CH 55V 80A DPAK

STD65N55F3

Manufacturer Part Number
STD65N55F3
Description
MOSFET N-CH 55V 80A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STD65N55F3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.5 mOhm @ 32A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
2200pF @ 25V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
32A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
6.5ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
8.5 m Ohms
Forward Transconductance Gfs (max / Min)
50 S
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
56 A to 80 A
Power Dissipation
110 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Gate Charge Qg
33.5 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7973-2
STD65N55F3

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD65N55F3
Manufacturer:
ST
Quantity:
12 500
Part Number:
STD65N55F3
Manufacturer:
ST
0
Part Number:
STD65N55F3
Manufacturer:
ST
Quantity:
20 000
Features
Description
This n-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronics' unique “Single Feature
Size™“ strip-based process, which has
decreased the critical alignment steps, offering
remarkable manufacturing reproducibility. The
outcome is a transistor with extremely high
packing density for low onresistance, rugged
avalanche characteristics and low gate charge.
Applications
May 2007
Order code
STD65N55F3
Standard threshold drive
100% avalanche tested
Switching application
– Automotive
Type
STD65N55F3
Part number
V
55V
DSS
<8.5mΩ
R
DS(on)
80A
I
65N55F3
D
Marking
110W
Pw
N-channel 55V - 6.5mΩ - 80A - DPAK
Rev 3
Internal schematic diagram
STripFET™ Power MOSFET
Package
DPAK
DPAK
STD65N55F3
1
3
Packaging
Tape & reel
www.st.com
1/13
13

Related parts for STD65N55F3

STD65N55F3 Summary of contents

Page 1

... Switching application – Automotive Order code Part number STD65N55F3 May 2007 N-channel 55V - 6.5mΩ - 80A - DPAK STripFET™ Power MOSFET 80A 110W Internal schematic diagram Marking Package 65N55F3 DPAK Rev 3 STD65N55F3 3 1 DPAK Packaging Tape & reel 1/13 www.st.com 13 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/ STD65N55F3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STD65N55F3 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-Source voltage GS I Drain current (continuous Drain current (continuous (1) Drain current (pulsed Total dissipation at T TOT Derating factor (2) Peak diode recovery voltage slope dv/dt (3) Single pulse avalanche energy Operating junction temperature ...

Page 4

... Max rating,Tc = 125° ±20V 10V Parameter Test conditions V =25V =25V, f=1MHz =27V =10V GS (see Figure 15) STD65N55F3 Min. Typ. Max. Unit = ± = 250µ 32A 6.5 D Min Typ. Max. Unit =32A 50 D 2200 =0 500 65A 33.5 D 12.5 9 µA 100 µA 200 ...

Page 5

... STD65N55F3 Table 5. Switching on/off (inductive load) Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 6. Source drain diode Symbol I Source-drain current SD I Source-drain current (pulsed) SDM V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characteristics Figure 5. Normalized BV DSS 6/13 Figure 2. Figure 4. vs temperature Figure 6. STD65N55F3 Thermal impedance Transfer characteristics Static drain-source on resistance ...

Page 7

... STD65N55F3 Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature 7/13 ...

Page 8

... Test circuit Figure 12. Unclamped inductive load test circuit Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load switching and diode recovery times 8/13 Figure 13. Unclamped inductive waveform Figure 15. Gate charge test circuit Figure 17. Switching time waveform STD65N55F3 ...

Page 9

... STD65N55F3 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 10

... STD65N55F3 inch MIN. TYP. MAX. 0.086 0.094 0.035 0.043 0.001 0.009 0.025 0.035 0.204 0.212 0.017 0.023 0.019 0.023 0.236 0.244 0.200 ...

Page 11

... STD65N55F3 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. MAX 10.4 10.6 B1 12.1 D 1.5 1.6 D1 1.5 E 1.65 1.85 F 7.4 7.6 K0 2.55 2.75 P0 3.9 4.1 P1 7.9 8.1 P2 1.9 2 15.7 16.3 TAPE AND REEL SHIPMENT inch MIN ...

Page 12

... Revision history 6 Revision history Table 7. Revision history Date 08-Feb-2007 22-Feb-2007 11-May-2007 12/13 Revision 1 First release 2 Description has been changed 3 Improved current values STD65N55F3 Changes ...

Page 13

... STD65N55F3 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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