STB14NM50N STMicroelectronics, STB14NM50N Datasheet - Page 13

• Manufacturer Part Number: STB14NM50N
• Description: MOSFET N-CH 500V 12A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB14NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 320 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 816pF @ 50V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 0.9 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 2 V
• Continuous Drain Current: 12 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 42 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10644-2

STB14NM50N, STD14NM50N, STF14NM50N, STP14NM50N
Dim
D
A
b
E
e
L
L
V
c
J
D
H
R
A
b
E
e
L
c
2
2
1
1
2
1
1
1
2
1
4
0
0
1
0
1
8
7
8
4
2
2
1
1
0079457_M
Min
1
1
° 0
4 .
0 .
7 .
1 .
4 .
2 .
9 .
5 .
5 .
8 .
4 .
2 .
2 .
3 .
0
5
3
0
0
4
5
3
5
0
0
8
9
9
7
0
D2PAK (TO-263) mechanical data
Doc ID 16832 Rev 3
Typ
2
m
0
5 .
4 .
m
4
Max
1
1
4
0
0
1
0
1
9
5
2
2
1
1
0
5
° 8
6 .
2 .
9 .
7 .
6 .
3 .
3 .
2 .
6 .
7 .
4 .
7 .
4 .
8 .
0
3
3
0
0
6
5
8
9
9
0
5
0
5
Min
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1 .
0 .
0 .
0 .
0 .
0 .
3 .
2 .
3 .
3 .
1 .
5 .
0 .
0 .
0 .
° 0
0 .
0
4
4
9
9
3
9
9
9
5
7
2
1
5
9
5
1
5
8
2
9
1
3
7
7
2
5
4
4
0
0
Package mechanical data
Typ
0
n i
0
0 .
c
1 .
1
h
6
Max
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1 .
0 .
0 .
0 .
0 .
0 .
3 .
4 .
2 .
6 .
1 .
1 .
0 .
0 .
° 8
8
0
3
6
2
5
6
0
0
2
0
1
5
6
1
9
7
7
4
3
8
9
8
4
6
0
5
9
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