IRF5210SPBF International Rectifier, IRF5210SPBF Datasheet - Page 2

• Manufacturer Part Number: IRF5210SPBF
• Description: MOSFET P-CH 100V 38A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF5210SPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 38A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 230nC @ 10V
• Input Capacitance (ciss) @ Vds: 2780pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Channel Type: P
• Current, Drain: -38 A
• Gate Charge, Total: 150 nC
• Package Type: D2Pak
• Polarization: P-Channel
• Power Dissipation: 170 W
• Resistance, Drain To Source On: 60 Milliohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 72 ns
• Time, Turn-on Delay: 14 ns
• Transconductance, Forward: 9.5 S
• Voltage, Breakdown, Drain To Source: -100 V
• Voltage, Drain To Source: –100 V
• Voltage, Forward, Diode: -1.6 V
• Voltage, Gate To Source: ±20 V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.06Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 38A
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:

‚
ƒ
V
∆ΒV
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
I
I
V
t
Q
t
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
SD
g
gs
gd
rr
I
2
SD
DSS
≤
≤
/∆T
Ω
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
≤
Parameter
Parameter
™
≤
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
-100
-2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.5
„
…
-0.11
2780
1180
–––
–––
–––
–––
–––
–––
–––
–––
150
800
430
–––
–––
–––
170
4.5
7.5
22
81
14
63
72
55
1770
-250
-100
-140
–––
–––
-4.0
–––
100
230
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
-1.6
260
-50
-38
60
33
≤
V/°C
mΩ
nC
nH
nC
µA
nA
pF
ns
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = -100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
GS
GS
DS
= -23A
= -23A
= 25°C, I
= 25°C, I
= 2.4Ω
= 0V, I
= 10V, I
= V
= -50V, I
= -100V, V
= -80V, V
= 20V
= -20V
= -80V
= -10V
= -50V
= -10V
= 0V
= -25V
GS
, I
D
Conditions
Conditions
D
f
f
S
F
D
≤
= -250µA
D
= -250µA
= -23A, V
GS
= -23A, V
= -38A
= -23A
GS
= 0V, T
f
= 0V
www.irf.com
D
f
= -1mA
DD
GS
J
= 125°C
= -25V
= 0V
f