IRF5210SPBF International Rectifier, IRF5210SPBF Datasheet - Page 4

• Manufacturer Part Number: IRF5210SPBF
• Description: MOSFET P-CH 100V 38A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF5210SPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 38A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 230nC @ 10V
• Input Capacitance (ciss) @ Vds: 2780pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Channel Type: P
• Current, Drain: -38 A
• Gate Charge, Total: 150 nC
• Package Type: D2Pak
• Polarization: P-Channel
• Power Dissipation: 170 W
• Resistance, Drain To Source On: 60 Milliohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 72 ns
• Time, Turn-on Delay: 14 ns
• Transconductance, Forward: 9.5 S
• Voltage, Breakdown, Drain To Source: -100 V
• Voltage, Drain To Source: –100 V
• Voltage, Forward, Diode: -1.6 V
• Voltage, Gate To Source: ±20 V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.06Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 38A
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100000
10000
1000
4
1000
100
100
0.1
10
1
0.2
1
0.4
-V SD , Source-to-Drain Voltage (V)
-V DS , Drain-to-Source Voltage (V)
T J = 150°C
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.6
0.8
f = 1 MHZ
1.0
10
T J = 25°C
C iss
C oss
C rss
1.2
1.4
V GS = 0V
1.6
100
1.8
1000
12.0
10.0
100
8.0
6.0
4.0
2.0
0.0
10
1
1
0
Tc = 25°C
Tj = 150°C
Single Pulse
I D = -23A
-V DS , Drain-to-Source Voltage (V)
25
Q G , Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
50
V DS = -80V
V DS = -50V
V DS = -20V
75
100
100
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10msec
100µsec
1msec
125
1000
150