IRFI4229PBF International Rectifier, IRFI4229PBF Datasheet - Page 2

• Manufacturer Part Number: IRFI4229PBF
• Description: MOSFET N-CH 250V 19A TO-220FP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFI4229PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 46 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 4480pF @ 25V
• Power - Max: 46W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 19 A
• Power Dissipation: 46 W
• Mounting Style: Through Hole
• Gate Charge Qg: 73 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics @ T
BV
∆ΒV
R
V
∆V
I
I
g
Q
Q
t
t
t
t
t
E
C
C
C
C
L
L
Avalanche Characteristics
E
E
V
I
Diode Characteristics
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
st
AS
S
SM
rr
fs
D
S
GS(th)
PULSE
AS
AR
DS(Avalanche)
SD
DS(on)
iss
oss
rss
oss
g
gd
rr
@ T
2
GS(th)
DSS
DSS
eff.
C
/∆T
/∆T
= 25°C Continuous Source Current
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Shoot Through Blocking Time
Energy per Pulse
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
Internal Source Inductance
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Repetitive Avalanche Voltage
Avalanche Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Ù
Parameter
Parameter
Ã
J
= 25°C (unless otherwise specified)
Ù
™
Min. Typ. Max. Units
Min. Typ. Max. Units
250
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.0
26
1380
4480
–––
340
–––
–––
–––
–––
–––
–––
–––
770
400
100
270
–––
–––
–––
120
540
-12
4.5
7.5
38
73
24
18
17
32
13
-100
Typ.
–––
–––
–––
200
100
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
300
–––
180
810
5.0
1.3
46
20
18
72
mV/°C
mV/°C
mΩ
nC
nH
nC
µA
nA
pF
ns
ns
µJ
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
R
See Fig. 22
V
L = 220nH, C= 0.3µF, V
V
L = 220nH, C= 0.3µF, V
V
V
V
ƒ = 1.0MHz,
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DD
DD
DD
DS
DS
GS
DS
GS
G
= 11A
= 25°C, I
= 25°C, I
= 2.4Ω
= 0V, I
= 10V, I
= V
= 250V, V
= 250V, V
= 20V
= -20V
= 25V, I
= 125V, I
= 125V, V
= 200V, V
= 200V, R
= 200V, R
= 0V
= 25V
= 0V, V
GS
Max.
110
–––
4.6
11
, I
D
S
F
D
DS
Conditions
D
D
Conditions
= 250µA
= 11A, V
= 11A, V
= 250µA
D
= 11A
= 11A
GS
GS
GS
GS
G
G
= 0V to 200V
= 11A, V
= 5.1Ω, T
= 5.1Ω, T
e
= 0V
= 0V, T
= 10V
= 15V, R
e
D
GS
DD
= 1mA
www.irf.com
Ãe
GS
J
GS
GS
= 0V
= 50V
J
J
= 125°C
G
= 10V
Units
= 25°C
= 100°C
= 5.1Ω
= 15V
= 15V
G
mJ
mJ
V
A
e
e
S
D