IRFI4229PBF International Rectifier, IRFI4229PBF Datasheet - Page 4

• Manufacturer Part Number: IRFI4229PBF
• Description: MOSFET N-CH 250V 19A TO-220FP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFI4229PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 46 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 4480pF @ 25V
• Power - Max: 46W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 19 A
• Power Dissipation: 46 W
• Mounting Style: Through Hole
• Gate Charge Qg: 73 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 11. Maximum Drain Current vs. Case Temperature
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
4
1800
1600
1400
1200
1000
7000
6000
5000
4000
3000
2000
1000
800
600
400
200
Fig 7. Typical E
20
18
16
14
12
10
0
0
8
6
4
2
0
20
25
1
C oss
L = 220nH
C rss
C iss
40
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
50
T C , Case Temperature (°C)
C = 0.3µF
60
Temperature (°C)
10
PULSE
75
80
f = 1 MHZ
vs.Temperature
100
100
C = 0.1µF
C = 0.2µF
100
120
125
140
1000
160
150
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 8. Typical Source-Drain Diode Forward Voltage
1000
12.0
10.0
0.01
100
100
Fig 12. Maximum Safe Operating Area
0.1
8.0
6.0
4.0
2.0
0.0
0.1
10
10
1
1
0.2
0
1
Tc = 25°C
Tj = 150°C
Single Pulse
I D = 11A
10
V SD , Source-to-Drain Voltage (V)
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
T J = 150°C
0.4
20
10msec
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
V DS = 200V
V DS = 125V
V DS = 50V
30
100µsec
0.6
40
1msec
50
100
T J = 25°C
0.8
V GS = 0V
60
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70
1000
1.0
80