IRF7799L2TRPBF International Rectifier, IRF7799L2TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7799L2TRPBF
• Description: MOSFET N-CH 250V DIRECTFET L8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7799L2TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 38 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 375A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 165nC @ 10V
• Input Capacitance (ciss) @ Vds: 6714pF @ 25V
• Power - Max: 4.3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric L8
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 35 A
• Power Dissipation: 125 W
• Gate Charge Qg: 110 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ƒ
„
ˆ
ƒ Surface mounted on 1 in. square Cu
board (still air).
Absolute Maximum Ratings
P
P
P
T
T
T
Thermal Resistance
R
R
R
R
R
Notes:
www.irf.com
P
J
STG
D
D
D
θJA
θJA
θJA
θJ-can
θJ-PCB
Surface mounted on 1 in. square Cu board, steady state.
Used double sided cooling, mounting pad with large heatsink.
T
@T
@T
@T
C
measured with thermocouple incontact with top (Drain) of part.
C
C
A
0.001
= 25°C
= 100°C
= 25°C
0.01
0.1
10
1
1E-006
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
Junction-to-PCB Mounted
D = 0.50
0.20
0.10
0.05
0.02
0.01
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
l
c
e
j
k
Parameter
Parameter
0.0001
t 1 , Rectangular Pulse Duration (sec)
‰ Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. (still air)
0.001
‰
Š
back and with small clip heatsink.
τ
Mounted on minimum footprint full size board with metalized
R
J
τ
θ
J
τ
1
Ci= τi/Ri
is measured at
τ
1
Ci
i/Ri
R
1
R
1
τ
0.01
2
τ
R
2
2
R
T
2
J
of approximately 90°C.
τ
Typ.
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
12.5
C
–––
–––
–––
τ
20
Ri (°C/W)
0.38829
0.8117
-55 to + 175
Max.
125
270
4.3
63
0.1
τi (sec)
„
0.006586
0.000787
Max.
–––
–––
1.2
0.5
35
1
Units
Units
°C/W
°C
W
3