IRF7799L2TRPBF International Rectifier, IRF7799L2TRPBF Datasheet - Page 9
IRF7799L2TRPBF
Manufacturer Part Number
IRF7799L2TRPBF
Description
MOSFET N-CH 250V DIRECTFET L8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7799L2TRPBF.pdf
(11 pages)
Specifications of IRF7799L2TRPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
38 mOhm @ 21A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
375A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
165nC @ 10V
Input Capacitance (ciss) @ Vds
6714pF @ 25V
Power - Max
4.3W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric L8
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
35 A
Power Dissipation
125 W
Gate Charge Qg
110 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7799L2TRPBF
Manufacturer:
UCHIHASHI
Quantity:
10 000
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
Note: For the most current drawing please refer to IR website at
DirectFET Part Marking
www.irf.com
DATE CODE
Line above the last character of
LOGO
PART NUMBER
BATCH NUMBER
the date code indicates "Lead-Free"
GATE MARKING
CODE
A
B
C
D
E
F
G
H
J
K
L
M
N
P
1.18
1.34
9.05
6.85
5.90
0.55
0.58
0.98
0.73
0.38
2.52
0.616
0.020
0.09
MIN
METRIC
DIMENSIONS
1.22
1.02
1.47
9.15
7.10
6.00
0.65
0.62
0.77
0.42
2.69
0.676
0.080
0.18
MAX
http://www.irf.com/package
0.356
0.270
0.232
0.022
0.023
0.046
0.015
0.029
0.015
0.053
0.099
0.0235
0.0008
0.003
MIN
IMPERIAL
0.360
0.280
0.236
0.026
0.024
0.048
0.017
0.030
0.017
0.058
0.106
0.0274
0.0031
0.007
MAX
9