IRF7759L2TR1PBF International Rectifier, IRF7759L2TR1PBF Datasheet - Page 2
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IRF7759L2TR1PBF
Manufacturer Part Number
IRF7759L2TR1PBF
Description
MOSFET N-CH 75V 375A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7759L2TRPBF.pdf
(11 pages)
Specifications of IRF7759L2TR1PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.3 mOhm @ 96A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
375A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
300nC @ 10V
Input Capacitance (ciss) @ Vds
12222pF @ 25V
Power - Max
3.3W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric L8
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
160 A
Power Dissipation
125 W
Gate Charge Qg
200 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7759L2TR1PBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7759L2TR1PBF
Manufacturer:
MXIC
Quantity:
101
Notes:
∆ΒV
∆V
Static @ T
BV
R
V
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
C
C
Diode Characteristics
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
GS(th)
SD
DS(on)
g
Q
Q
Q
Q
sw
oss
G
iss
oss
rss
oss
oss
rr
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
GS(th)
DSS
gs1
gs2
gd
godr
DSS
/∆T
/∆T
J
J
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
g
gs2
+ Q
gd
)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
75
74
12222
1465
7457
0.02
–––
–––
–––
–––
–––
–––
200
609
955
–––
–––
–––
150
-11
1.8
3.0
1.1
37
11
62
91
73
60
18
37
80
33
64
-100
–––
–––
–––
250
100
–––
300
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
160
640
225
2.3
4.0
1.3
20
93
96
mV/°C
V/°C
mΩ
µA
nA
nC
nC
nC
pF
ns
ns
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
See Fig. 9
V
V
I
R
V
V
ƒ = 1.0MHz
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
GS
GS
G
= 96A
= 96A
= 25°C, I
= 25°C, I
=1.8Ω
= V
= 75V, V
= 60V, V
= 25V, I
= 38V
= 16V, V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 38V, V
= 0V
= 0V, V
= 0V, V
GS
, I
D
Conditions
Conditions
S
F
D
DS
DS
D
D
= 250µA
GS
GS
GS
GS
= 96A, V
= 96A, V
= 250µA
= 96A
= 96A
= 1.0V, f=1.0MHz
= 60V, f=1.0MHz
= 0V
= 0V, T
= 0V
= 10V
i
i
D
www.irf.com
GS
DD
= 2mA
J
i
= 125°C
= 38V
= 0V
i