IRF7759L2TR1PBF International Rectifier, IRF7759L2TR1PBF Datasheet - Page 4
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IRF7759L2TR1PBF
Manufacturer Part Number
IRF7759L2TR1PBF
Description
MOSFET N-CH 75V 375A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7759L2TRPBF.pdf
(11 pages)
Specifications of IRF7759L2TR1PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.3 mOhm @ 96A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
375A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
300nC @ 10V
Input Capacitance (ciss) @ Vds
12222pF @ 25V
Power - Max
3.3W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric L8
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
160 A
Power Dissipation
125 W
Gate Charge Qg
200 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7759L2TR1PBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7759L2TR1PBF
Manufacturer:
MXIC
Quantity:
101
4
100000
10000
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 4. Typical Output Characteristics
Fig 6. Typical Transfer Characteristics
1000
0.01
1000
1000
100
0.1
100
100
10
0.1
10
1
1
0.1
1
2
V DS = 25V
≤60µs PULSE WIDTH
2.5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
3
≤ 60µs
Tj = 25°C
1
C rss
3.5
3.75V
C iss
C oss
PULSE WIDTH
f = 1 MHZ
10
4
4.5
10
TOP
BOTTOM
T J = 175°C
TJ = 25°C
TJ = -40°C
5
5.5
VGS
15V
10V
7.00V
5.50V
5.00V
4.50V
4.00V
3.75V
100
100
6
Fig 7. Normalized On-Resistance vs. Temperature
1000
100
2.5
2.0
1.5
1.0
0.5
14
12
10
10
8
6
4
2
0
1
Fig 9. Typical Total Gate Charge vs
-60
0.1
0
Fig 5. Typical Output Characteristics
I D = 96A
V GS = 10V
I D = 96A
TOP
BOTTOM
Gate-to-Source Voltage
-20
V DS , Drain-to-Source Voltage (V)
50
T J , Junction Temperature (°C)
Q G , Total Gate Charge (nC)
VGS
15V
10V
7.00V
5.50V
5.00V
4.50V
4.00V
3.75V
100
20
1
V DS = 60V
V DS = 38V
VDS= 15V
≤ 60µs
Tj = 175°C
3.75V
150
60
PULSE WIDTH
100
200
10
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140
250
180
300
100