IRF7759L2TR1PBF International Rectifier, IRF7759L2TR1PBF Datasheet - Page 5
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IRF7759L2TR1PBF
Manufacturer Part Number
IRF7759L2TR1PBF
Description
MOSFET N-CH 75V 375A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7759L2TRPBF.pdf
(11 pages)
Specifications of IRF7759L2TR1PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.3 mOhm @ 96A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
375A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
300nC @ 10V
Input Capacitance (ciss) @ Vds
12222pF @ 25V
Power - Max
3.3W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric L8
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
160 A
Power Dissipation
125 W
Gate Charge Qg
200 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7759L2TR1PBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7759L2TR1PBF
Manufacturer:
MXIC
Quantity:
101
Fig 10. Typical Source-Drain Diode Forward Voltage
www.irf.com
Fig 12. Maximum Drain Current vs. Case Temperature
1000
100
0.1
200
160
120
10
80
40
1
0
0.2
25
T J = 175°C
TJ = 25°C
TJ = -40°C
V SD , Source-to-Drain Voltage (V)
50
0.4
T C , Case Temperature (°C)
75
0.6
Fig 14. Maximum Avalanche Energy Vs. Drain Current
100
0.8
1200
1000
800
600
400
200
125
0
V GS = 0V
25
1.0
150
Starting T J , Junction Temperature (°C)
50
1.2
175
75
100
TOP
BOTTOM 96A
125
10000
1000
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
100
0.1
10
23.97A
I D
15.39A
1
-75 -50 -25
150
0
Tc = 25°C
Tj = 175°C
Single Pulse
Fig 13. Typical Threshold Voltage vs.
I D = 1.0A
ID = 1.0mA
ID = 250µA
Fig11. Maximum Safe Operating Area
V DS , Drain-to-Source Voltage (V)
175
OPERATION IN THIS AREA LIMITED
BY R DS (on)
T J , Temperature ( °C )
Junction Temperature
0
DC
1
25 50 75 100 125 150 175
10msec
1msec
10
100µsec
100
5