IRFB3306PBF International Rectifier, IRFB3306PBF Datasheet - Page 11

• Manufacturer Part Number: IRFB3306PBF
• Description: MOSFET N-CH 60V 120A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB3306PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 4520pF @ 50V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 160 A
• Power Dissipation: 230 W
• Mounting Style: Through Hole
• Gate Charge Qg: 85 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.irf.com
2
FEED DIRECTION
FEED DIRECTION
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
TRR
TRL
330.00
(14.173)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
MAX.
1.85 (.073)
1.65 (.065)
10.90 (.429)
10.70 (.421)
13.50 (.532)
12.80 (.504)
4.10 (.161)
3.90 (.153)
1.60 (.063)
1.50 (.059)
This product has been designed and qualified for the Industrial market.
16.10 (.634)
15.90 (.626)
11.60 (.457)
11.40 (.449)
Visit us at www.irf.com for sales contact information. 04/2008
1.75 (.069)
1.25 (.049)
1.60 (.063)
1.50 (.059)
Data and specifications subject to change without notice.
Qualification Standards can be found on IR’s Web site.
27.40 (1.079)
23.90 (.941)
26.40 (1.039)
24.40 (.961)
15.42 (.609)
15.22 (.601)
4
3
30.40 (1.197)
0.368 (.0145)
0.342 (.0135)
60.00 (2.362)
MAX.
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
4
MIN.
TAC Fax: [phone]
11