IRFB3306PBF International Rectifier, IRFB3306PBF Datasheet - Page 3

MOSFET N-CH 60V 120A TO-220AB

IRFB3306PBF

Manufacturer Part Number
IRFB3306PBF
Description
MOSFET N-CH 60V 120A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFB3306PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.2 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 150µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
4520pF @ 50V
Power - Max
230W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
160 A
Power Dissipation
230 W
Mounting Style
Through Hole
Gate Charge Qg
85 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFB3306PBF
Manufacturer:
OMRON
Quantity:
12 000
Part Number:
IRFB3306PBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRFB3306PBF
0
Company:
Part Number:
IRFB3306PBF
Quantity:
2 000
Company:
Part Number:
IRFB3306PBF
Quantity:
41 000
www.irf.com
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
1000
1000
8000
6000
4000
2000
100
100
0.1
10
10
0
1
0.1
2.0
Fig 3. Typical Transfer Characteristics
1
Fig 1. Typical Output Characteristics
TOP
BOTTOM
T J = 175°C
V DS , Drain-to-Source Voltage (V)
3.0
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
4.0
1
T J = 25°C
Ciss
Coss
Crss
V DS = 25V
≤ 60μs PULSE WIDTH
4.5V
5.0
≤ 60μs PULSE WIDTH
Tj = 25°C
f = 1 MHZ
10
6.0
10
7.0
100
8.0
100
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
100
2.5
2.0
1.5
1.0
0.5
20
16
12
10
8
4
0
-60 -40 -20 0
0.1
0
Fig 2. Typical Output Characteristics
I D = 75A
TOP
BOTTOM
I D = 75A
V GS = 10V
20
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Q G Total Gate Charge (nC)
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
40
V DS = 48V
VDS= 30V
VDS= 12V
1
20 40 60 80 100 120 140 160 180
60
≤ 60μs PULSE WIDTH
Tj = 175°C
4.5V
80
10
100
120
140
100
3

Related parts for IRFB3306PBF