IRFB3306PBF International Rectifier, IRFB3306PBF Datasheet - Page 8

• Manufacturer Part Number: IRFB3306PBF
• Description: MOSFET N-CH 60V 120A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB3306PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 4520pF @ 50V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 160 A
• Power Dissipation: 230 W
• Mounting Style: Through Hole
• Gate Charge Qg: 85 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TO-220AB packages are not recommended for Surface Mount Application.
8
EXAMPLE: T HIS IS AN IRF1010
Note: "P" in as s embly line pos ition
indicates "Lead - F ree"
LOT CODE 1789
AS S EMBLED ON WW 19, 2000
IN T HE AS S EMBLY LINE "C"
INT ERNAT IONAL
RECT IFIER
AS S EMBLY
LOT CODE
LOGO
DAT E CODE
YEAR 0 = 2000
WEEK 19
LINE C
PART NUMBER
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