IRFB4229PBF International Rectifier, IRFB4229PBF Datasheet

MOSFET N-CH 250V 46A TO-220AB

IRFB4229PBF

Manufacturer Part Number
IRFB4229PBF
Description
MOSFET N-CH 250V 46A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheet

Specifications of IRFB4229PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
46 mOhm @ 26A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
46A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
4560pF @ 25V
Power - Max
330W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
46A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
38mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.046Ohm
Drain-source On-volt
250V
Gate-source Voltage (max)
±30V
Continuous Drain Current
46A
Power Dissipation
330W
Operating Temp Range
-40C to 175C
Operating Temperature Classification
Automotive
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
30 V
Mounting Style
Through Hole
Gate Charge Qg
72 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRFB4229PBF
Manufacturer:
IR
Quantity:
3 000
Price:
Notes  through … are on page 8
www.irf.com
Features
l
l
l
l
l
l
l
l
l
Description
V
I
I
I
I
P
P
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
RP
175°C Operating Junction Temperature for
Energy Recovery and Pass Switch Applications
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
Reliable Operation
Improved Ruggedness
and Reliability
(Half-bridge)
J
STG
GS
D
D
Advanced Process Technology
Key Parameters Optimized for PDP Sustain,
Low E
Low Q
High Repetitive Peak Current Capability for
Short Fall & Rise Times for Fast Switching
Class-D Audio Amplifier 300W-500W
θJC
θCS
θJA
Repetitive Avalanche Capability for Robustness
@ T
@ T
@T
@T
@ T
HEXFET
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
PULSE
= 100°C
G
for Fast Response
MOSFET
®
Rating to Reduce Power
Power MOSFET
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
f
Parameter
Parameter
f
g
MOSFET
GS
GS
PULSE
@ 10V
@ 10V
V
V
R
I
T
RP
DS
DS (Avalanche)
J
DS(ON)
G
max
max @ T
min
Gate
typ. @ 10V
G
typ.
C
= 100°C
Typ.
0.50
–––
–––
Key Parameters
10lb
S
D
-40 to + 175
IRFB4229PbF
x
in (1.1N
Max.
180
330
190
300
±30
2.2
46
33
91
Drain
D
x
m)
MOSFET
Max.
0.45
–––
62
250
300
175
38
91
D
TO-220AB
Source
S
Units
Units
W/°C
°C/W
°C
W
V
A
N
09/10/07
m
°C
V
V
A
G
D
S
1

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IRFB4229PBF Summary of contents

Page 1

... Notes  through … are on page 8 www.irf.com V min DS V typ. DS (Avalanche) R typ. @ 10V DS(ON) I max @ max Gate MOSFET PULSE Parameter @ 10V GS @ 10V GS g Parameter f f IRFB4229PbF Key Parameters 250 V 300 100° 175 ° TO-220AB D S Drain Source MOSFET Max. Units ± 180 91 ...

Page 2

Electrical Characteristics @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.5V 6.0V 100 BOTTOM 5.5V 10 5.5V ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 T J ...

Page 4

L = 220nH C= 0.3µF 1600 C= 0.2µF C= 0.1µF 1200 800 400 100 Temperature (°C) Fig 7. Typical E vs.Temperature PULSE 7000 0V MHZ C iss = C ...

Page 5

125°C 0. 25°C 0. Gate-to-Source Voltage (V) Fig 13. On-Resistance Vs. Gate Voltage 5.0 4.5 4 250µA 3.5 3.0 2.5 2.0 ...

Page 6

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 18 D.U 20V GS 0.01 Ω Fig 19a. Unclamped Inductive Test Circuit L ...

Page 7

A RG DRIVER L B Ipulse RG DUT Fig 21a. t and E Test Circuit st PULSE ≤ 1 ≤ 0.1 % Fig 22a. Switching Time Test Circuit www.irf.com PULSE A C PULSE B VCC Fig 21c. E Test Waveforms ...

Page 8

TO-220AB packages are not recommended for Surface Mount Application. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting T = 25° 0.37mH 25Ω ƒ Pulse width ≤ 400µs; duty ...

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