IRFB4229PBF International Rectifier, IRFB4229PBF Datasheet - Page 5

• Manufacturer Part Number: IRFB4229PBF
• Description: MOSFET N-CH 250V 46A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFB4229PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 46 mOhm @ 26A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 46A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 4560pF @ 25V
• Power - Max: 330W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 46A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 38mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.046Ohm
• Drain-source On-volt: 250V
• Gate-source Voltage (max): ±30V
• Continuous Drain Current: 46A
• Power Dissipation: 330W
• Operating Temp Range: -40C to 175C
• Operating Temperature Classification: Automotive
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: 30 V
• Mounting Style: Through Hole
• Gate Charge Qg: 72 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 15. Threshold Voltage vs. Temperature
0.40
0.30
0.20
0.10
0.00
Fig 13. On-Resistance Vs. Gate Voltage
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
-75 -50 -25
5
0.001
0.01
0.1
1
1E-006
V GS , Gate-to-Source Voltage (V)
6
D = 0.50
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
T J , Temperature ( °C )
0
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
7
25
50
1E-005
8
T J = 125°C
T J = 25°C
75
I D = 250µA
100 125 150 175
I D = 26A
9
10
t 1 , Rectangular Pulse Duration (sec)
0.0001
Fig 14. Maximum Avalanche Energy Vs. Temperature
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci= τi/Ri
0.001
R
1
R
600
500
400
300
200
100
140
120
100
1
Fig 16. Typical Repetitive peak Current vs.
80
60
40
20
0
0
τ
2
25
25
R
τ
2
2
R
2
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Starting T J , Junction Temperature (°C)
R
τ
3
3
R
50
τ
50
3
3
τ
C
Case temperature
τ
0.01
Case Temperature (°C)
Ri (°C/W)
0.080717 0.000052
0.209555 0.001021
0.159883 0.007276
75
75
100
100
τι (sec)
ton= 1µs
Duty cycle = 0.25
TOP
BOTTOM
Half Sine Wave
Square Pulse
125
125
0.1
13A
7.4A
26A
150
150
I D
5
175
175