IRF3805S-7PPBF International Rectifier, IRF3805S-7PPBF Datasheet - Page 2
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IRF3805S-7PPBF
Manufacturer Part Number
IRF3805S-7PPBF
Description
MOSFET N-CH 55V 160A D2PAK-7
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF3805S-7PPBF.pdf
(11 pages)
Specifications of IRF3805S-7PPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.6 mOhm @ 140A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
7820pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (6 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
240A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
2.6mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
240 A
Power Dissipation
300 W
Mounting Style
SMD/SMT
Gate Charge Qg
130 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Notes:
V
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
Static @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
D
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
2
g
gs
gd
rr
Repetitive rating; pulse width limited by
L=0.043mH, R
Part not recommended for use above this value.
Pulse width
C
charging time as C
V
V
max. junction temperature. (See fig. 11).
Limited by T
DSS
oss
DSS
eff.
SMD
.
eff. is a fixed capacitance that gives the same
/ T
J
J
Jmax
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
1.0ms; duty cycle
G
= 25°C (unless otherwise specified)
= 25 , I
, starting T
oss
Parameter
while V
AS
Parameter
= 140A, V
J
= 25°C,
DS
is rising from 0 to 80%
2%.
GS
=10V.
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
55
Limited by T
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
R is measured at T
Solder mounted on IMS substrate.
avalanche performance.
7820
1260
4310
1540
0.05
–––
–––
–––
–––
–––
–––
–––
130
130
610
980
–––
–––
–––
2.0
4.5
7.5
53
49
23
80
52
45
35
1000
-200
–––
–––
–––
250
200
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
240
2.6
4.0
1.3
20
68
53
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
V/°C
m
µA
nA
nC
nH
nC
ns
pF
ns
V
V
S
A
V
2
Pak, when mounted on 1" square PCB
J
of approximately 90°C.
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 140A
= 140A
= 25°C, I
= 25°C, I
= 2.4
= V
= 25V, I
= 55V, V
= 55V, V
= 44V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 28V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
e
d
Conditions
D
Conditions
D
DS
S
F
D
D
DS
DS
= 250µA
GS
GS
= 250µA
= 140A, V
= 140A
= 140A, V
= 140A
= 0V to 44V
= 1.0V, ƒ = 1.0MHz
= 44V, ƒ = 1.0MHz
e
= 0V
= 0V, T
www.irf.com
D
e
= 1mA
G
J
GS
DD
= 125°C
G
= 28V
= 0V
S
D
S
D
e