IRF3805S-7PPBF International Rectifier, IRF3805S-7PPBF Datasheet - Page 6
![MOSFET N-CH 55V 160A D2PAK-7](/photos/5/50/55043/21-d2pak-7_sml.jpg)
IRF3805S-7PPBF
Manufacturer Part Number
IRF3805S-7PPBF
Description
MOSFET N-CH 55V 160A D2PAK-7
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF3805S-7PPBF.pdf
(11 pages)
Specifications of IRF3805S-7PPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.6 mOhm @ 140A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
7820pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (6 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
240A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
2.6mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
240 A
Power Dissipation
300 W
Mounting Style
SMD/SMT
Gate Charge Qg
130 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
I
AS
12V
V
V
G
GS
R G
20V
V
Same Type as D.U.T.
V DS
GS
Current Regulator
Q
.2 F
GS
t p
t p
50K
3mA
Current Sampling Resistors
I AS
D.U.T
.3 F
0.01
L
I
G
Q
Charge
Q
V
GD
G
(BR)DSS
D.U.T.
I
D
15V
+
-
V
DS
DRIVER
+
-
V DD
A
Fig 14. Threshold Voltage vs. Temperature
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
2000
1500
1000
500
Fig 12c. Maximum Avalanche Energy
0
-75 -50 -25
25
I D = 250µA
I D = 1.0mA
I D = 1.0A
Starting T J , Junction Temperature (°C)
50
vs. Drain Current
T J , Temperature ( °C )
0
75
25
50
100
75 100 125 150 175 200
www.irf.com
TOP
BOTTOM 140A
125
150
I D
21A
37A
175