STW21NM50N STMicroelectronics, STW21NM50N Datasheet - Page 4
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STW21NM50N
Manufacturer Part Number
STW21NM50N
Description
MOSFET N-CH 500V 18A TO-247
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STB25NM50N-1.pdf
(18 pages)
Specifications of STW21NM50N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
1950pF @ 25V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
TO-247-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4806-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STW21NM50N
Manufacturer:
ST
Quantity:
12 000
Company:
Part Number:
STW21NM50N
Manufacturer:
ST
Quantity:
6 000
Electrical characteristics
2
4/18
Electrical characteristics
(T
Table 5.
1. Characteristic value at turn off on inductive load
Table 6.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
dv/dt
R
CASE
V
oss eq.
(BR)DSS
g
I
I
increases from 0 to 80% V
DS(on)
C
GS(th)
C
C
Q
Q
DSS
GSS
fs
Q
R
oss eq.
oss
rss
iss
gs
gd
g
(1)
g
(1)
=25°C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
breakdown voltage
Drain source voltage slope
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
DS
GS
= 0)
I
V
V
V
V
V
V
V
V
V
V
V
V
V
(see Figure 19)
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
D
DD
GS
DS
DS
GS
DS
GS
GS
GS
GS
DS
DS
DD
= 1 mA, V
= 400 V, I
= 10 V
= Max rating
= Max rating, @125 °C
= ± 20 V
= V
= 10 V, I
=15 V
= 25 V, f = 1 MHz,
= 0
= 0, V
= 400 V, I
= 10 V,
Test conditions
Test conditions
GS
,
, I
DS
I
D
GS
D
D
D
= 0 to 400 V
= 11 A
= 250 µA
D
= 11 A
= 0
= 25 A,
= 22 A,
Min.
500
Min.
2
0.110 0.140
Typ.
2565
Typ.
511
315
1.6
19
77
84
11
35
44
3
oss
STx25NM50N
when V
Max. Unit
Max. Unit
100
10
1
4
DS
V/ns
nC
nC
nC
pF
pF
pF
pF
µA
µA
nA
Ω
S
V
V
Ω