IRLS3034-7PPBF International Rectifier, IRLS3034-7PPBF Datasheet - Page 5

• Manufacturer Part Number: IRLS3034-7PPBF
• Description: MOSFET N-CH 40V 240A D2PAK-7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLS3034-7PPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.4 mOhm @ 200A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 240A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 10990pF @ 40V
• Power - Max: 380W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (6 leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.7 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 380 A
• Power Dissipation: 380 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 120 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 15. Maximum Avalanche Energy vs. Temperature
300
250
200
150
100
50
0
1000
25
0.001
100
0.01
10
0.1
1.0E-06
1
Starting T J , Junction Temperature (°C)
1E-006
1
50
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
0.10
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.05
0.01
D = 0.50
TOP
BOTTOM 1.0% Duty Cycle
I D = 220A
0.20
Duty Cycle = Single Pulse
75
0.10
0.05
0.01
0.02
100
SINGLE PULSE
( THERMAL RESPONSE )
1.0E-05
Single Pulse
1E-005
Fig 14. Typical Avalanche Current vs.Pulsewidth
125
150
t 1 , Rectangular Pulse Duration (sec)
175
1.0E-04
0.0001
τ
J
τ
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
6. I
7. ∆T
J
τ
tav (sec)
1
Ci= τi/Ri
τ
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
during avalanche).
25°C in Figure 14, 15).
t
D = Duty cycle in avalanche = t
Z
av
av =
1
Ci
thJC
D (ave)
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
i/Ri
Allowable rise in junction temperature, not to exceed T
R
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
1
R
= Average power dissipation per single avalanche pulse.
1
av
1.0E-03
) = Transient thermal resistance, see Figures 13)
jmax
τ
2
0.001
τ
R
2
2
R
. This is validated for every part type.
2
P
D (ave)
R
τ
3
3
R
τ
3
3
= 1/2 ( 1.3·BV·I
I
E
av
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
R
AS (AR)
4
τ
4
= 2DT/ [1.3·BV·Z
R
4
4
av
1.0E-02
τ
C
τ
·f
Ri (°C/W)
0.01
= P
0.00741
0.05041
0.18384
0.15864
D (ave)
av
) = DT/ Z
·t
th
av
]
0.000005
0.000038
0.001161
0.008809
τi (sec)
jmax
thJC
1.0E-01
jmax
is not exceeded.
0.1
(assumed as
5