IRLS3034-7PPBF International Rectifier, IRLS3034-7PPBF Datasheet - Page 6

• Manufacturer Part Number: IRLS3034-7PPBF
• Description: MOSFET N-CH 40V 240A D2PAK-7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLS3034-7PPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.4 mOhm @ 200A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 240A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 10990pF @ 40V
• Power - Max: 380W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (6 leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.7 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 380 A
• Power Dissipation: 380 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 120 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig 16. Threshold Voltage vs. Temperature
16
14
12
10
8
6
4
2
-75 -50 -25
0
I F = 134A
V R = 34V
T J = 25°C
T J = 125°C
I D = 250µA
I D = 1.0mA
I D = 1.0A
100
T J , Temperature ( °C )
200
0
di F /dt (A/µs)
25 50 75 100 125 150 175
300
400
500
800
700
600
500
400
300
200
100
0
600
0
I F = 134A
V R = 34V
T J = 25°C
T J = 125°C
100 200 300 400 500 600 700 800
f
700
di F /dt (A/µs)
900
800
700
600
500
400
300
200
100
16
14
12
10
0
8
6
4
2
0
0
I F = 89A
V R = 34V
T J = 25°C
T J = 125°C
I F = 89A
V R = 34V
T J = 25°C
T J = 125°C
f
100 200 300 400 500 600 700 800
100
200
di F /dt (A/µs)
di F /dt (A/µs)
300
400
500
600
www.irf.com
700
f
f