IRFB4310PBF International Rectifier, IRFB4310PBF Datasheet - Page 2
![MOSFET N-CH 100V 130A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRFB4310PBF
Manufacturer Part Number
IRFB4310PBF
Description
MOSFET N-CH 100V 130A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRFB4310PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
130A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
250nC @ 10V
Input Capacitance (ciss) @ Vds
7670pF @ 50V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
130 A
Gate Charge, Total
170 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
300 W
Resistance, Drain To Source On
5.6 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
68 ns
Time, Turn-on Delay
26 ns
Transconductance, Forward
160 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
140 A
Mounting Style
Through Hole
Gate Charge Qg
170 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFB4310PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFB4310PBF
Manufacturer:
IR
Quantity:
35 000
Part Number:
IRFB4310PBF
Manufacturer:
IR
Quantity:
20 000
Notes:
Static @ T
V
∆V
R
V
I
I
R
Dynamic @ T
gfs
Q
Q
Q
t
t
t
t
C
C
C
C
C
Diode Characteristics
I
I
V
t
Q
I
t
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
(BR)DSS
GS(th)
SD
DS(on)
G
g
gs
gd
iss
oss
rss
oss
oss
rr
temperature. Package limitation current is 75A
above this value.
Calculated continuous current based on maximum allowable junction
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
I
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
R
SD
Symbol
Symbol
Symbol
(BR)DSS
G
eff. (ER) Effective Output Capacitance (Energy Related)
eff. (TR) Effective Output Capacitance (Time Related)
≤ 75A, di/dt ≤ 550A/µs, V
= 25Ω, I
/∆T
J
AS
Jmax
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Input Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
= 75A, V
= 25°C (unless otherwise specified)
, starting T
J
= 25°C (unless otherwise specified)
Parameter
GS
=10V. Part not recommended for use
J
= 25°C, L = 0.35mH
DD
Ãd
≤ V
Parameter
Parameter
(BR)DSS
, T
J
≤ 175°C.
h
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
100
––– 0.064 –––
–––
–––
–––
–––
–––
–––
160
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 720.1 –––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
C
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended
R
C
as C
C
footprint and soldering techniques refer to application note #AN-994.
oss
θ
oss
oss
is measured at T
7670
eff. (TR) is a fixed capacitance that gives the same charging time
oss
eff. (ER) is a fixed capacitance that gives the same energy as
while V
–––
–––
–––
–––
–––
–––
–––
170
110
540
280
650
––– 130
–––
–––
120
5.6
1.4
3.3
46
62
26
68
78
45
55
82
while V
DS
-200
–––
250
200
–––
–––
250
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
550
120
180
–––
7.0
4.0
1.3
20
68
83
DS
is rising from 0 to 80% V
is rising from 0 to 80% V
J
V/°C
mΩ
approximately 90°C.
µA
nA
nC
pF
nC T
ns
ns
V
V
Ω
S
A
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
f = 1MHz, open drain
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
D
D
J
J
J
J
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
G
= 75A
= 75A
= 25°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 2.6Ω
= V
= 100V, V
= 100V, V
= 50V, I
= 80V
= 50V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 65V
= 10V
= 0V
= 0V, V
= 0V, V
GS
, I
D
g
g
DSS
D
DS
DS
S
D
D
= 250µA
= 75A, V
= 250µA
DSS
= 75A
= 75A
.
GS
GS
= 0V to 80V
= 0V to 80V
Conditions
Conditions
Conditions
.
= 0V
= 0V, T
V
I
di/dt = 100A/µs
F
R
= 75A
g
D
= 85V,
GS
= 1mA
J
= 0V
= 125°C
j
h
www.irf.com
d
, See Fig.11
, See Fig. 5
g
G
g
S
D