IRFB4310PBF International Rectifier, IRFB4310PBF Datasheet - Page 6
![MOSFET N-CH 100V 130A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRFB4310PBF
Manufacturer Part Number
IRFB4310PBF
Description
MOSFET N-CH 100V 130A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRFB4310PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
130A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
250nC @ 10V
Input Capacitance (ciss) @ Vds
7670pF @ 50V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
130 A
Gate Charge, Total
170 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
300 W
Resistance, Drain To Source On
5.6 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
68 ns
Time, Turn-on Delay
26 ns
Transconductance, Forward
160 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
140 A
Mounting Style
Through Hole
Gate Charge Qg
170 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFB4310PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFB4310PBF
Manufacturer:
IR
Quantity:
35 000
Part Number:
IRFB4310PBF
Manufacturer:
IR
Quantity:
20 000
6
Fig 16. Threshold Voltage Vs. Temperature
5.0
4.0
3.0
2.0
1.0
20
16
12
8
4
0
100 200 300 400 500 600 700 800 900 1000
-75 -50 -25
T J , Temperature ( °C )
0
di f / dt - (A / µs)
25
50
I F = 45A
V R = 85V
T J = 125°C
T J = 25°C
75
500
400
300
200
100
I D = 1.0A
I D = 1.0mA
I D = 250µA
100 125 150 175
0
100 200 300 400 500 600 700 800 900 1000
f
di f / dt - (A / µs)
I F = 45A
V R = 85V
T J = 125°C
T J = 25°C
500
400
300
200
100
20
16
12
8
4
0
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
f
di f / dt - (A / µs)
di f / dt - (A / µs)
I F = 30A
V R = 85V
T J = 125°C
T J = 25°C
I F = 30A
V R = 85V
T J = 125°C
T J = 25°C
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