IRFB4310PBF International Rectifier, IRFB4310PBF Datasheet - Page 7
![MOSFET N-CH 100V 130A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRFB4310PBF
Manufacturer Part Number
IRFB4310PBF
Description
MOSFET N-CH 100V 130A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRFB4310PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
130A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
250nC @ 10V
Input Capacitance (ciss) @ Vds
7670pF @ 50V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
130 A
Gate Charge, Total
170 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
300 W
Resistance, Drain To Source On
5.6 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
68 ns
Time, Turn-on Delay
26 ns
Transconductance, Forward
160 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
140 A
Mounting Style
Through Hole
Gate Charge Qg
170 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFB4310PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFB4310PBF
Manufacturer:
IR
Quantity:
35 000
Part Number:
IRFB4310PBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Fig 22a. Unclamped Inductive Test Circuit
Fig 23a. Switching Time Test Circuit
Fig 24a. Gate Charge Test Circuit
0
+
R
-
R G
20V
V
V DS
GS
D.U.T
Duty Factor < 0.1%
Pulse Width < 1µs
V
t p
1K
GS
Fig 21.
I AS
D.U.T
V
+
-
•
•
•
•
DS
0.01 Ω
L
SD
DUT
•
•
•
D.U.T
L
L
15V
D
-
V
G
HEXFET
DRIVER
DD
+
-
+
-
+
V DD
VCC
V
A
®
Power MOSFETs
+
-
Re-Applied
Voltage
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
90%
Fig 22b. Unclamped Inductive Waveforms
V
10%
V
DS
Fig 23b. Switching Time Waveforms
P.W.
SD
GS
= 5V for Logic Level Devices
DS
I
Fig 24b. Gate Charge Waveform
AS
Vgs(th)
Waveform
Qgs1 Qgs2
Waveform
Vds
for N-Channel
Ripple ≤ 5%
Body Diode
t
d(on)
Period
Body Diode Forward
Diode Recovery
Current
t
r
Qgd
dv/dt
Forward Drop
t p
di/dt
Qgodr
D =
t
d(off)
Period
P.W.
V
t
(BR)DSS
f
V
V
I
SD
GS
DD
Vgs
=10V
Id
7