STW21N65M5 STMicroelectronics, STW21N65M5 Datasheet - Page 16

• Manufacturer Part Number: STW21N65M5
• Description: MOSFET N-CH 650V 17A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW21N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1950pF @ 100V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 3 V
• Continuous Drain Current: 10.7 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 50 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10654-5; STW21N65M5

Packaging mechanical data
5
16/18
Packaging mechanical data
DIM.
D1
A0
B0
K0
P0
P1
P2
W
D
E
R
F
T
TAPE MECHANICAL DATA
MIN.
10.5
15.7
1.59
1.65
0.25
23.7
11.4
11.9
1.5
4.8
3.9
1.9
50
D
mm
2
PAK FOOTPRINT
MAX.
10.7
15.9
1.61
1.85
11.6
12.1
0.35 0.0098 0.0137
24.3
1.6
5.0
4.1
2.1
0.413 0.421
0.618 0.626
0.059 0.063
0.062 0.063
0.065 0.073
0.449 0.456
0.189 0.197
0.153 0.161
0.468 0.476
0.075 0.082
1.574
0.933 0.956
MIN.
inch
TAPE AND REEL SHIPMENT
MAX.
Doc ID 15427 Rev 3
DIM.
C
D
G
N
A
B
T
BASE QTY
REEL MECHANICAL DATA
1000
MIN.
12.8
20.2
24.4
100
1.5
mm
STB/F/I/P/W21N65M5
MAX.
13.2
26.4
30.4
330
BULK QTY
0.059
0.504 0.520
0.960 1.039
3.937
0795
MIN.
1000
inch
12.992
MAX.
1.197