NTS4173PT1G ON Semiconductor, NTS4173PT1G Datasheet
NTS4173PT1G
Specifications of NTS4173PT1G
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NTS4173PT1G Summary of contents
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... I −1 260 °C L Device Symbol Max Unit NTS4173PT1G R 425 °C/W qJA R 360 qJA †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. * Date code orientation may vary depending upon ...
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MOSFET ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain−to−Source On−Resistance Forward Transconductance CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance ...
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V 4.5 −4 4.0 J −3.0 V 3.5 3.0 2.5 2.0 1.5 1.0 0 0.5 1.0 1.5 −V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.30 0.25 0.20 0.15 0.10 0.05 2 ...
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C iss 400 300 200 C oss 100 C rss −V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 100 V = −4 − ...
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TYPICAL PERFORMANCE CURVES 10 1.0 V SINGLE PULSE 0.1 T 0.01 0.1 Figure 13. Maximum Rated Forward Biased 1.0 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 0.0001 0.001 0.01 = − 25° ...
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... A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...