NTS4173PT1G ON Semiconductor, NTS4173PT1G Datasheet - Page 3

• Manufacturer Part Number: NTS4173PT1G
• Description: MOSFET P-CH 30V 1.2A SC70-3
• Manufacturer: ON Semiconductor

Specifications of NTS4173PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 150 mOhm @ 1.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 10.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 430pF @ 15V
• Power - Max: 290mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.15 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3.6 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.2 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.30
0.25
0.20
0.15
0.10
0.05
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0
2
0
−50
V
Figure 3. On−Resistance vs. Gate Voltage
I
GS
D
Figure 5. On−Resistance Variation with
−25
3
= −1.2 A
Figure 1. On−Region Characteristics
−V
−V
0.5
= −10 V
DS
GS
T
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
J
4
, JUNCTION TEMPERATURE (°C)
0
−10 V
1.0
−3.0 V
−4.5 V
5
Temperature
25
1.5
6
50
T
J
7
= 25°C
75
2.0
TYPICAL CHARACTERISTICS
8
100
T
I
D
J
2.5
= −1.2 A
= 25°C
−2.6 V
−2.2 V
−2.0 V
−1.8 V
−2.4 V
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9
125
3.0
10
150
3
1000
0.30
0.25
0.20
0.15
0.10
0.05
100
5.0
4.0
3.0
2.0
1.0
10
0
1
1.0
0.0
0
Figure 4. On−Resistance vs. Drain Current and
V
V
V
V
V
Figure 6. Drain−to−Source Leakage Current
DS
GS
GS
GS
GS
0.5
1.25
T
≥ −10 V
J
= −2.5 V
= −2.2 V
= −4.5 V
−V
= −10 V
−V
= 25°C
Figure 2. Transfer Characteristics
5
DS
1.0
GS
, DRAIN−TO−SOURCE VOLTAGE (V)
1.5
, GATE−TO−SOURCE VOLTAGE (V)
T
J
−I
1.5
= 125°C
D
10
, DRAIN CURRENT (A)
1.75
Gate Voltage
2.0
vs. Voltage
T
T
T
J
T
J
J
J
= 150°C
= 125°C
2.0
2.5
= 85°C
15
= −55°C
3.0
2.25
20
3.5
2.5
4.0
T
25
J
2.75
= 25°C
4.5
30
3.0
5.0