NTS4173PT1G ON Semiconductor, NTS4173PT1G Datasheet - Page 3
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NTS4173PT1G
Manufacturer Part Number
NTS4173PT1G
Description
MOSFET P-CH 30V 1.2A SC70-3
Manufacturer
ON Semiconductor
Datasheet
1.NTS4173PT1G.pdf
(6 pages)
Specifications of NTS4173PT1G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
150 mOhm @ 1.2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
1.2A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
10.1nC @ 10V
Input Capacitance (ciss) @ Vds
430pF @ 15V
Power - Max
290mW
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.15 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
3.6 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
1.2 A
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTS4173PT1G
Manufacturer:
ON
Quantity:
9 000
Company:
Part Number:
NTS4173PT1G
Manufacturer:
ON Semiconductor
Quantity:
130
Company:
Part Number:
NTS4173PT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTS4173PT1G
Manufacturer:
ON/安森美
Quantity:
20 000
0.30
0.25
0.20
0.15
0.10
0.05
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0
2
0
−50
V
Figure 3. On−Resistance vs. Gate Voltage
I
GS
D
Figure 5. On−Resistance Variation with
−25
3
= −1.2 A
Figure 1. On−Region Characteristics
−V
−V
0.5
= −10 V
DS
GS
T
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
J
4
, JUNCTION TEMPERATURE (°C)
0
−10 V
1.0
−3.0 V
−4.5 V
5
Temperature
25
1.5
6
50
T
J
7
= 25°C
75
2.0
TYPICAL CHARACTERISTICS
8
100
T
I
D
J
2.5
= −1.2 A
= 25°C
−2.6 V
−2.2 V
−2.0 V
−1.8 V
−2.4 V
http://onsemi.com
9
125
3.0
10
150
3
1000
0.30
0.25
0.20
0.15
0.10
0.05
100
5.0
4.0
3.0
2.0
1.0
10
0
1
1.0
0.0
0
Figure 4. On−Resistance vs. Drain Current and
V
V
V
V
V
Figure 6. Drain−to−Source Leakage Current
DS
GS
GS
GS
GS
0.5
1.25
T
≥ −10 V
J
= −2.5 V
= −2.2 V
= −4.5 V
−V
= −10 V
−V
= 25°C
Figure 2. Transfer Characteristics
5
DS
1.0
GS
, DRAIN−TO−SOURCE VOLTAGE (V)
1.5
, GATE−TO−SOURCE VOLTAGE (V)
T
J
−I
1.5
= 125°C
D
10
, DRAIN CURRENT (A)
1.75
Gate Voltage
2.0
vs. Voltage
T
T
T
J
T
J
J
J
= 150°C
= 125°C
2.0
2.5
= 85°C
15
= −55°C
3.0
2.25
20
3.5
2.5
4.0
T
25
J
2.75
= 25°C
4.5
30
3.0
5.0