NTS4173PT1G ON Semiconductor, NTS4173PT1G Datasheet - Page 5

• Manufacturer Part Number: NTS4173PT1G
• Description: MOSFET P-CH 30V 1.2A SC70-3
• Manufacturer: ON Semiconductor

Specifications of NTS4173PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 150 mOhm @ 1.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 10.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 430pF @ 15V
• Power - Max: 290mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.15 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3.6 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.2 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
1.0
0.1
0.0001
0.05
0.5
0.2
0.1
0.02
0.01
Single Pulse
0.001
0.01
1.0
0.1
10
0.1
0.01
Figure 13. Maximum Rated Forward Biased
V
SINGLE PULSE
T
TYPICAL PERFORMANCE CURVES
C
GS
= 25°C
Figure 14. FET Thermal Response
−V
= −12 V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
http://onsemi.com
t, TIME (SECONDS)
Safe Operating Area
1.0
0.1
LIMIT
5
10
1.0
10 ms
100 ms
10 ms
dc
1 ms
100
10
100
1000