NTS4173PT1G ON Semiconductor, NTS4173PT1G Datasheet - Page 5
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NTS4173PT1G
Manufacturer Part Number
NTS4173PT1G
Description
MOSFET P-CH 30V 1.2A SC70-3
Manufacturer
ON Semiconductor
Datasheet
1.NTS4173PT1G.pdf
(6 pages)
Specifications of NTS4173PT1G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
150 mOhm @ 1.2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
1.2A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
10.1nC @ 10V
Input Capacitance (ciss) @ Vds
430pF @ 15V
Power - Max
290mW
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.15 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
3.6 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
1.2 A
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTS4173PT1G
Manufacturer:
ON
Quantity:
9 000
Company:
Part Number:
NTS4173PT1G
Manufacturer:
ON Semiconductor
Quantity:
130
Company:
Part Number:
NTS4173PT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTS4173PT1G
Manufacturer:
ON/安森美
Quantity:
20 000
0.01
1.0
0.1
0.0001
0.05
0.5
0.2
0.1
0.02
0.01
Single Pulse
0.001
0.01
1.0
0.1
10
0.1
0.01
Figure 13. Maximum Rated Forward Biased
V
SINGLE PULSE
T
TYPICAL PERFORMANCE CURVES
C
GS
= 25°C
Figure 14. FET Thermal Response
−V
= −12 V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
http://onsemi.com
t, TIME (SECONDS)
Safe Operating Area
1.0
0.1
LIMIT
5
10
1.0
10 ms
100 ms
10 ms
dc
1 ms
100
10
100
1000