NTR1P02T1G ON Semiconductor, NTR1P02T1G Datasheet
NTR1P02T1G
Specifications of NTR1P02T1G
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NTR1P02T1G Summary of contents
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... T − stg 150 °C/W R 300 qJA °C T 260 L Device NTR1P02T1 NTR1P02T1G NTR1P02T3 NTR1P02T3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com R TYP I MAX DS(on) D 148 mW @ − ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage = −10 mA (Positive Temperature Coefficient) Zero Gate Voltage Drain Current (V = − 25° ...
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V 2 −4.5 V 1.75 1.5 1.25 1 0.75 0.5 0. 0.25 0.5 0.75 1 1.25 −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.45 0 −4 0.35 0.3 ...
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C iss 250 C rss 200 150 100 −V − GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 100 ...
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... 0.95 0.037 0.035 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTR1P02T1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. ...
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... Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com NTR1P02T1 N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: http://onsemi ...