NTR1P02T1G ON Semiconductor, NTR1P02T1G Datasheet - Page 4
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NTR1P02T1G
Manufacturer Part Number
NTR1P02T1G
Description
MOSFET P-CH 20V 1A SOT-23
Manufacturer
ON Semiconductor
Type
Power MOSFETr
Datasheet
1.NTR1P02T1G.pdf
(6 pages)
Specifications of NTR1P02T1G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
180 mOhm @ 1.5A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1A
Vgs(th) (max) @ Id
2.3V @ 250µA
Gate Charge (qg) @ Vgs
2.5nC @ 5V
Input Capacitance (ciss) @ Vds
165pF @ 5V
Power - Max
400mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.18 Ohm @ 10 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1 A
Power Dissipation
400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.18Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTR1P02T1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTR1P02T1G
Manufacturer:
ON
Quantity:
69 000
Company:
Part Number:
NTR1P02T1G
Manufacturer:
ON
Quantity:
36 000
Company:
Part Number:
NTR1P02T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTR1P02T1G
Manufacturer:
ON/安森美
Quantity:
20 000
100
10
300
250
200
150
100
1
50
0
1
10
Figure 9. Resistive Switching Time Variation
V
I
V
D
C
C
DD
GS
iss
rss
= −1 A
t
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
d(off)
V
= −15 V
= −5 V
DS
5
t
f
−V
= 0 V
Figure 7. Capacitance Variation
GS
versus Gate Resistance
R
0
G
V
, GATE RESISTANCE (W)
−V
GS
VOLTAGE (VOLTS)
DS
= 0 V
5
10
10
t
r
C
C
C
15
oss
iss
rss
T
J
= 25°C
20
t
d(on)
http://onsemi.com
NTR1P02T1
100
25
4
1.001
0.901
0.801
0.701
0.601
0.501
0.401
0.301
0.201
0.101
0.001
4.5
1.5
3
0
6
0
2.0E−01
Drain−to−Source Voltage versus Total Charge
V
Figure 10. Diode Forward Voltage versus
DS
V
T
V
J
GS
Q
SD
3.0E−01
= 25°C
Figure 8. Gate−to−Source and
1
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
= 0 V
0.5
Q
G
, TOTAL GATE CHARGE (nC)
4.0E−01
Current
Q
1
T
5.0E−01
V
Q
GS
2
1.5
6.0E−01
I
T
D
J
= −1 A
= 25°C
7.0E−01
2