NTR1P02T1G ON Semiconductor, NTR1P02T1G Datasheet - Page 4

• Manufacturer Part Number: NTR1P02T1G
• Description: MOSFET P-CH 20V 1A SOT-23
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTR1P02T1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 2.3V @ 250µA
• Gate Charge (qg) @ Vgs: 2.5nC @ 5V
• Input Capacitance (ciss) @ Vds: 165pF @ 5V
• Power - Max: 400mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.18 Ohm @ 10 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.18Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTR1P02T1GOSTR

100
10
300
250
200
150
100
1
50
0
1
10
Figure 9. Resistive Switching Time Variation
V
I
V
D
C
C
DD
GS
iss
rss
= −1 A
t
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
d(off)
V
= −15 V
= −5 V
DS
5
t
f
−V
= 0 V
Figure 7. Capacitance Variation
GS
versus Gate Resistance
R
0
G
V
, GATE RESISTANCE (W)
−V
GS
VOLTAGE (VOLTS)
DS
= 0 V
5
10
10
t
r
C
C
C
15
oss
iss
rss
T
J
= 25°C
20
t
d(on)
http://onsemi.com
NTR1P02T1
100
25
4
1.001
0.901
0.801
0.701
0.601
0.501
0.401
0.301
0.201
0.101
0.001
4.5
1.5
3
0
6
0
2.0E−01
Drain−to−Source Voltage versus Total Charge
V
Figure 10. Diode Forward Voltage versus
DS
V
T
V
J
GS
Q
SD
3.0E−01
= 25°C
Figure 8. Gate−to−Source and
1
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
= 0 V
0.5
Q
G
, TOTAL GATE CHARGE (nC)
4.0E−01
Current
Q
1
T
5.0E−01
V
Q
GS
2
1.5
6.0E−01
I
T
D
J
= −1 A
= 25°C
7.0E−01
2