NTR1P02T1G ON Semiconductor, NTR1P02T1G Datasheet - Page 2

• Manufacturer Part Number: NTR1P02T1G
• Description: MOSFET P-CH 20V 1A SOT-23
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTR1P02T1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 2.3V @ 250µA
• Gate Charge (qg) @ Vgs: 2.5nC @ 5V
• Input Capacitance (ciss) @ Vds: 165pF @ 5V
• Power - Max: 400mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.18 Ohm @ 10 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.18Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTR1P02T1GOSTR

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 2)
BODY−DRAIN DIODE RATINGS (Note 1)
ELECTRICAL CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−Body Leakage Current (V
Gate Threshold Voltage
Static Drain−to−Source On−State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Diode Forward On−Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Stored Charge
(V
(Positive Temperature Coefficient)
(V
(V
(V
(Negative Temperature Coefficient)
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(I
(I
(I
(I
S
S
S
S
GS
DS
DS
DS
GS
GS
DS
DS
DS
DD
DD
DD
DD
DS
DS
DS
= −0.6 A, V
= −0.6 A, V
= −1 A, dI
= −1 A, dI
= −20 V, V
= −20 V, V
= −5 V, V
= −5 V, V
= −5 V, V
= −15 V, V
= −15 V, V
= −15 V, V
= 0 V, I
= V
= −10 V, I
= −4.5 V, I
= −15 V, I
= −15 V, I
= −15 V, I
= −15 V, I
GS
, I
D
S
S
D
/dt = 100 A/ms, V
/dt = 100 A/ms, V
= −10 mA)
GS
GS
GS
GS
GS
D
D
D
D
D
= −250 mA)
D
GS
GS
GS
GS
GS
= −1.5 A)
= −1 A, V
= −1 A, V
= −1 A, V
= −1 A, V
= −0.75 A)
= 0 V, f = 1.0 MHz)
= 0 V, f = 1.0 MHz)
= 0 V, f = 1.0 MHz)
= 0 V)
= 0 V, T
= 0 V, T
= 0 V, T
= −5 V, I
= −5 V, I
= −5 V, I
J
GS
GS
GS
GS
J
J
= 150°C)
D
D
D
= 25°C)
= 150°C)
Characteristic
GS
= −0.8 A)
= −0.8 A)
= −0.8 A)
= −5 V, R
= −5 V, R
= −5 V, R
= −5 V, R
GS
GS
= ±20 V, V
= 0 V)
= 0 V)
(T
G
G
G
G
A
= 2.5 W)
= 2.5 W)
= 2.5 W)
= 2.5 W)
= 25°C unless otherwise noted)
DS
= 0 V)
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NTR1P02T1
2
V
Symbol
R
V
(BR)DSS
t
t
I
I
C
Q
DS(on)
C
V
GS(th)
C
Q
Q
d(on)
d(off)
Q
DSS
GSS
t
t
t
oss
t
t
SD
rss
RR
iss
rr
a
b
tot
gs
gd
r
f
−1.1
Min
−20
0.148
0.235
0.008
−1.9
−4.0
0.75
−0.8
−0.6
13.5
10.5
Typ
165
110
7.0
9.0
9.0
3.0
2.5
1.0
3.0
32
35
0.180
0.280
±100
Max
−1.0
−2.3
−1.0
−10
mV/°C
mV/°C
Unit
nA
nC
mC
mA
pF
ns
ns
W
V
V
V