NTGS5120PT1G ON Semiconductor, NTGS5120PT1G Datasheet - Page 2

• Manufacturer Part Number: NTGS5120PT1G
• Description: MOSFET P-CH 60V 1.8A 6-TSOP
• Manufacturer: ON Semiconductor

Specifications of NTGS5120PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 111 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 18.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 942pF @ 30V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.111 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 1400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
4. Surface−mounted on FR4 board using the minimum recommended pad size.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%
6. Switching characteristics are independent of operating junction temperatures
THERMAL RESISTANCE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 6)
DRAIN−SOURCE DIODE CHARACTERISTICS
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – t = 5 s (Note 3)
Junction−to−Ambient – Steady State (Note 4)
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Reverse Recovery Charge
Parameter
Parameter
(T
J
= 25°C unless otherwise specified)
V
Symbol
V
Q
R
Q
t
(BR)DSS
C
C
t
d(OFF)
GS(TH)
I
I
C
G(TOT)
Q
Q
d(ON)
Q
DS(on)
V
g
DSS
GSS
G(TH)
t
OSS
RSS
RR
t
FS
ISS
t
t
SD
GS
GD
RR
a
r
f
http://onsemi.com
V
GS
2
V
V
I
V
V
DS
V
V
S
GS
V
V
V
= 0 V, f = 1 MHz, V
GS
V
GS
V
V
V
GS
GS
I
= −0.9 A
GS
DS
D
GS
GS
GS
DS
DS
= −48 V
= 0 V, d
= 0 V,
= −1.0 A, R
= 0 V,
= −10 V, V
= −10 V, V
= −5.0 V, I
Test Condition
= −4.5 V, I
= V
= −10 V, I
= 0 V, I
= 0 V, V
= 0 V, V
I
I
D
S
DS
= −2.9 A
= −0.9 A
IS
, I
D
/d
D
GS
GS
= −250 mA
DS
DS
t
D
= −250 mA
G
D
D
= 100 A/ms,
= ±12 V
= ±20 V
= −2.9 A
= −6.0 A
= 6.0 W
= −2.5 A
Symbol
= −30 V;
= −30 V,
T
T
T
DS
R
R
R
J
J
J
qJA
qJA
qJA
= 125°C
= 25°C
= 25°C
= −30 V
−1.0
Min
−60
−0.75
10.1
18.1
12.8
18.3
15.5
15.1
Typ
942
Value
1.2
2.7
3.6
8.7
4.9
72
88
72
48
38
77.6
102
200
$100
$200
Max
−1.0
−5.0
−3.0
−1.0
142
111
°C/W
Unit
Unit
mW
mA
nA
nA
nC
nC
pF
ns
ns
ns
V
V
S
V